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      Startseite > Alle Kategorien  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

      FETs, MOSFETs

      Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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      Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
      SCT3030AW7TL

      SCT3030AW7TL

      SICFET N-CH 650V 70A TO263-7

      Rohm Semiconductor

      		 432
      RFQ
      		SCT3030AW7TL

      Datenblatt

             		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) - 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 267W 175°C (TJ) - - Surface Mount TO-263-7
      IXTT3N200P3HV

      IXTT3N200P3HV

      MOSFET N-CH 2000V 3A TO268

      Littelfuse Inc.

      		 300
      RFQ
      		IXTT3N200P3HV

      Datenblatt

             		Polar P3™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXTT)
      SCT3040KW7TL

      SCT3040KW7TL

      SICFET N-CH 1200V 56A TO263-7

      Rohm Semiconductor

      		 986
      RFQ
      		SCT3040KW7TL

      Datenblatt

             		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 267W 175°C (TJ) - - Surface Mount TO-263-7
      SCT3030ALHRC11

      SCT3030ALHRC11

      SICFET N-CH 650V 70A TO247N

      Rohm Semiconductor

      		 445
      RFQ
      		SCT3030ALHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      STY112N65M5

      STY112N65M5

      MOSFET N-CH 650V 96A MAX247

      STMicroelectronics

      		 543
      RFQ
      		STY112N65M5

      Datenblatt

             		MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 47A, 10V 5V @ 250µA 350 nC @ 10 V ±25V 16870 pF @ 100 V - 625W (Tc) 150°C (TJ) - - Through Hole MAX247™
      IXTX8N150L

      IXTX8N150L

      MOSFET N-CH 1500V 8A PLUS247-3

      IXYS

      		 256
      RFQ
      		IXTX8N150L

      Datenblatt

             		Linear TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 8A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
      SCT3040KLHRC11

      SCT3040KLHRC11

      SICFET N-CH 1200V 55A TO247N

      Rohm Semiconductor

      		 849
      RFQ
      		SCT3040KLHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      S2M0025120D

      S2M0025120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 300
      RFQ
      		S2M0025120D

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
      S2M0025120K

      S2M0025120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 270
      RFQ
      		S2M0025120K

      Datenblatt

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
      IXFN80N50Q3

      IXFN80N50Q3

      MOSFET N-CH 500V 63A SOT227B

      IXYS

      		 140
      RFQ
      		IXFN80N50Q3

      Datenblatt

             		HiPerFET™, Q3 Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
      IXTN17N120L

      IXTN17N120L

      MOSFET N-CH 1200V 15A SOT-227B

      Littelfuse Inc.

      		 240
      RFQ
      		IXTN17N120L

      Datenblatt

             		Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
      SCT3022ALHRC11

      SCT3022ALHRC11

      SICFET N-CH 650V 93A TO247N

      Rohm Semiconductor

      		 2,246
      RFQ
      		SCT3022ALHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      SCT3030KLHRC11

      SCT3030KLHRC11

      SICFET N-CH 1200V 72A TO247N

      Rohm Semiconductor

      		 580
      RFQ
      		SCT3030KLHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      IXTB62N50L

      IXTB62N50L

      MOSFET N-CH 500V 62A PLUS264

      Littelfuse Inc.

      		 195
      RFQ
      		IXTB62N50L

      Datenblatt

             		Linear TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 31A, 20V 5.5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
      IXTX1R4N450HV

      IXTX1R4N450HV

      MOSFET N-CH 4500V 1.4A TO247PLUS

      Littelfuse Inc.

      		 297
      RFQ
      		IXTX1R4N450HV

      Datenblatt

             		- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247PLUS-HV
      IXTN30N100L

      IXTN30N100L

      MOSFET N-CH 1000V 30A SOT227B

      Littelfuse Inc.

      		 593
      RFQ
      		IXTN30N100L

      Datenblatt

             		Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 15A, 20V 5.5V @ 250µA 545 nC @ 20 V ±30V 13700 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
      IXTF1R4N450

      IXTF1R4N450

      MOSFET N-CH 4500V 1.4A I4PAC

      IXYS

      		 1,099
      RFQ
      		IXTF1R4N450

      Datenblatt

             		- i4-Pac™-5 (3 Leads) Tube Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
      SCT3017ALGC11

      SCT3017ALGC11

      650V, 118A, THD, TRENCH-STRUCTUR

      Rohm Semiconductor

      		 435
      RFQ
      		SCT3017ALGC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) - - Through Hole TO-247N
      SCT3017ALHRC11

      SCT3017ALHRC11

      SICFET N-CH 650V 118A TO247N

      Rohm Semiconductor

      		 1,098
      RFQ
      		SCT3017ALHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      SCT3022KLHRC11

      SCT3022KLHRC11

      SICFET N-CH 1200V 95A TO247N

      Rohm Semiconductor

      		 1,127
      RFQ
      		SCT3022KLHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
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