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      Startseite > Alle Kategorien  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

      FETs, MOSFETs

      Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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      Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
      SCT4026DEC11

      SCT4026DEC11

      750V, 26M, 3-PIN THD, TRENCH-STR

      Rohm Semiconductor

      		 4,887
      RFQ
      		SCT4026DEC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) - - Through Hole TO-247N
      SCT2160KEHRC11

      SCT2160KEHRC11

      1200V, 22A, THD, SILICON-CARBIDE

      Rohm Semiconductor

      		 374
      RFQ
      		SCT2160KEHRC11

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      IXTR102N65X2

      IXTR102N65X2

      MOSFET N-CH 650V 54A ISOPLUS247

      Littelfuse Inc.

      		 300
      RFQ
      		IXTR102N65X2

      Datenblatt

             		Ultra X2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 33mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
      SCT4026DW7HRTL

      SCT4026DW7HRTL

      750V, 51A, 7-PIN SMD, TRENCH-STR

      Rohm Semiconductor

      		 995
      RFQ
      		SCT4026DW7HRTL

      Datenblatt

             		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 51A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 150W 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7L
      SCT4026DW7TL

      SCT4026DW7TL

      750V, 51A, 7-PIN SMD, TRENCH-STR

      Rohm Semiconductor

      		 988
      RFQ
      		SCT4026DW7TL

      Datenblatt

             		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 51A (Tj) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 150W 175°C (TJ) - - Surface Mount TO-263-7L
      IPZA65R018CFD7XKSA1

      IPZA65R018CFD7XKSA1

      HIGH POWER_NEW

      Infineon Technologies

      		 238
      RFQ
      		IPZA65R018CFD7XKSA1

      Datenblatt

             		CoolMOS™ CFD7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11660 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-3
      NVHL027N65S3F

      NVHL027N65S3F

      MOSFET N-CH 650V 75A TO247-3

      onsemi

      		 479
      RFQ
      		NVHL027N65S3F

      Datenblatt

             		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
      IXFR24N100Q3

      IXFR24N100Q3

      MOSFET N-CH 1000V 18A ISOPLUS247

      Littelfuse Inc.

      		 337
      RFQ
      		IXFR24N100Q3

      Datenblatt

             		HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 490mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
      C3M0075120D-A

      C3M0075120D-A

      75M 1200V 175C SIC FET

      Wolfspeed, Inc.

      		 379
      RFQ
      		C3M0075120D-A

      Datenblatt

             		C3M™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 90mOhm @ 20A, 15V 3.6V @ 5mA 54 nC @ 15 V +15V, -4V 1390 pF @ 1000 V - 136W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
      IXFL100N50P

      IXFL100N50P

      MOSFET N-CH 500V 70A ISOPLUS264

      Littelfuse Inc.

      		 225
      RFQ
      		IXFL100N50P

      Datenblatt

             		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 70A (Tc) 10V 52mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS264™
      SCTWA50N120

      SCTWA50N120

      SICFET N-CH 1200V 65A HIP247

      STMicroelectronics

      		 378
      RFQ
      		SCTWA50N120

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) - - Through Hole HiP247™
      STY100NM60N

      STY100NM60N

      MOSFET N CH 600V 98A MAX247

      STMicroelectronics

      		 600
      RFQ
      		STY100NM60N

      Datenblatt

             		MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 98A (Tc) 10V 29mOhm @ 49A, 10V 4V @ 250µA 330 nC @ 10 V 25V 9600 pF @ 50 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole MAX247™
      IXFX44N80P

      IXFX44N80P

      MOSFET N-CH 800V 44A PLUS247-3

      Littelfuse Inc.

      		 300
      RFQ
      		IXFX44N80P

      Datenblatt

             		HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
      IXFK32N100P

      IXFK32N100P

      MOSFET N-CH 1000V 32A TO264AA

      Littelfuse Inc.

      		 300
      RFQ
      		IXFK32N100P

      Datenblatt

             		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
      IXFB110N60P3

      IXFB110N60P3

      MOSFET N-CH 600V 110A PLUS264

      Littelfuse Inc.

      		 118
      RFQ
      		IXFB110N60P3

      Datenblatt

             		HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 110A (Tc) 10V 56mOhm @ 55A, 10V 5V @ 8mA 245 nC @ 10 V ±30V 18000 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
      S2M0040120D

      S2M0040120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 221
      RFQ
      		S2M0040120D

      Datenblatt

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - - - - Through Hole TO-247-3
      IXFR80N50Q3

      IXFR80N50Q3

      MOSFET N-CH 500V 50A ISOPLUS247

      Littelfuse Inc.

      		 192
      RFQ
      		IXFR80N50Q3

      Datenblatt

             		HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 72mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
      S2M0040120K

      S2M0040120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 103
      RFQ
      		S2M0040120K

      Datenblatt

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - - - - Through Hole TO-247-4
      NTH4L027N65S3F

      NTH4L027N65S3F

      MOSFET N-CH 650V 75A TO247-4

      onsemi

      		 449
      RFQ
      		NTH4L027N65S3F

      Datenblatt

             		FRFET®, SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 259 nC @ 10 V ±30V 7690 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
      NTH027N65S3F-F155

      NTH027N65S3F-F155

      MOSFET N-CH 650V 75A TO247-3

      onsemi

      		 472
      RFQ
      		NTH027N65S3F-F155

      Datenblatt

             		FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 7.5mA 259 nC @ 10 V ±30V 7690 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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