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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TS10P07GH

    TS10P07GH

    BRIDGE RECT 1PHASE 1KV 10A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS10P07GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 10 A 1.1 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS10P06GH

    TS10P06GH

    BRIDGE RECT 1P 800V 10A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS10P06GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 10 A 1.1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    KBU604G

    KBU604G

    BRIDGE RECT 1PHASE 400V 6A KBU

    Taiwan Semiconductor Corporation

    447
    RFQ
    KBU604G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    KBJ2510G-BP

    KBJ2510G-BP

    BRIDGE RECT 1PHASE 1KV 25A KBJ

    Micro Commercial Co

    999
    RFQ
    KBJ2510G-BP

    Datenblatt

    - 4-SIP, KBJ Tube Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBJ
    TS25P05GH

    TS25P05GH

    BRIDGE RECT 1P 600V 25A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS25P05GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 25 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS25P07GH

    TS25P07GH

    BRIDGE RECT 1PHASE 1KV 25A TS-6P

    Taiwan Semiconductor Corporation

    1,193
    RFQ
    TS25P07GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 25 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS25P06GH

    TS25P06GH

    BRIDGE RECT 1P 800V 25A TS-6P

    Taiwan Semiconductor Corporation

    1,179
    RFQ
    TS25P06GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS8P05G

    TS8P05G

    BRIDGE RECT 1PHASE 600V 8A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS8P05G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    TS8P05GH

    TS8P05GH

    BRIDGE RECT 1PHASE 600V 8A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS8P05GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS8P06GH

    TS8P06GH

    BRIDGE RECT 1PHASE 800V 8A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS8P06GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS35P06G

    TS35P06G

    BRIDGE RECT 1P 800V 35A TS-6P

    Taiwan Semiconductor Corporation

    1,198
    RFQ
    TS35P06G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBPC602

    KBPC602

    BRIDGE RECT 1P 200V 3.8A KBPC6

    Diotec Semiconductor

    306
    RFQ
    KBPC602

    Datenblatt

    - 4-Square, KBPC-6 Bulk Active Single Phase Standard 200 V 3.8 A 1.2 V @ 3 A 5 µA @ 200 V -50°C ~ 150°C (TJ) - - Through Hole KBPC6
    KBPC608

    KBPC608

    BRIDGE RECT 1P 800V 3.8A KBPC6

    Diotec Semiconductor

    304
    RFQ
    KBPC608

    Datenblatt

    - 4-Square, KBPC-6 Bulk Active Single Phase Standard 800 V 3.8 A 1.2 V @ 3 A 5 µA @ 800 V -50°C ~ 150°C (TJ) - - Through Hole KBPC6
    KBU804G

    KBU804G

    BRIDGE RECT 1PHASE 400V 8A KBU

    Taiwan Semiconductor Corporation

    498
    RFQ
    KBU804G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    KBU806G

    KBU806G

    BRIDGE RECT 1PHASE 800V 8A KBU

    Taiwan Semiconductor Corporation

    448
    RFQ
    KBU806G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    KBPC804

    KBPC804

    BRIDGE RECT 1PHASE 400V 5A KBPC8

    Diotec Semiconductor

    394
    RFQ
    KBPC804

    Datenblatt

    - 4-Square, KBPC-8 Bulk Active Single Phase Standard 400 V 5 A 1.2 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) - - Through Hole KBPC8
    KBU805G

    KBU805G

    BRIDGE RECT 1PHASE 600V 8A KBU

    Taiwan Semiconductor Corporation

    313
    RFQ
    KBU805G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    B250C5000A

    B250C5000A

    BRIDGE RECT 1PHASE 600V 4A 4-SIL

    Diotec Semiconductor

    476
    RFQ
    B250C5000A

    Datenblatt

    - 4-ESIP Box Active Single Phase Standard 600 V 4 A 1 V @ 5 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
    GBU12D

    GBU12D

    BRIDGE RECT 1PHASE 200V 8.4A GBU

    Diotec Semiconductor

    990
    RFQ
    GBU12D

    Datenblatt

    - 4-SIP, GBU Box Active Single Phase Standard 200 V 8.4 A 1 V @ 12 A 5 µA @ 200 V -50°C ~ 150°C (TJ) - - Through Hole GBU
    GBU12K

    GBU12K

    BRIDGE RECT 1PHASE 800V 8.4A GBU

    Diotec Semiconductor

    988
    RFQ
    GBU12K

    Datenblatt

    - 4-SIP, GBU Box Active Single Phase Standard 800 V 8.4 A 1 V @ 12 A 5 µA @ 800 V -50°C ~ 150°C (TJ) - - Through Hole GBU
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