Bomkey (HK) Elektronik GmbH!

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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TS6P06GH

    TS6P06GH

    BRIDGE RECT 1PHASE 800V 6A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS6P06GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS6P04GH

    TS6P04GH

    BRIDGE RECT 1PHASE 400V 6A TS-6P

    Taiwan Semiconductor Corporation

    1,174
    RFQ
    TS6P04GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    GBL08E-E3/A

    GBL08E-E3/A

    BRIDGE RECT 1PHASE 800V 2.6A GBL

    Vishay General Semiconductor - Diodes Division

    2,333
    RFQ
    GBL08E-E3/A

    Datenblatt

    - 4-SIP, GBL Bulk Active Single Phase Standard 800 V 2.6 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBL
    GBL06E-E3/A

    GBL06E-E3/A

    BRIDGE RECT 1PHASE 600V 3A GBL

    Vishay General Semiconductor - Diodes Division

    1,540
    RFQ
    GBL06E-E3/A

    Datenblatt

    - 4-SIP, GBL Bulk Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
    GBL01E-E3/P

    GBL01E-E3/P

    BRIDGE RECT 1PHASE 100V 2.6A GBL

    Vishay General Semiconductor - Diodes Division

    1,500
    RFQ
    GBL01E-E3/P

    Datenblatt

    - 4-SIP, GBL Tube Active Single Phase Standard 100 V 2.6 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBL
    GBL06E-E3/P

    GBL06E-E3/P

    BRIDGE RECT 1PHASE 600V 3A GBL

    Vishay General Semiconductor - Diodes Division

    1,230
    RFQ
    GBL06E-E3/P

    Datenblatt

    - 4-SIP, GBL Bulk Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
    GBL10E-E3/A

    GBL10E-E3/A

    BRIDGE RECT 1PHASE 1KV 3A GBL

    Vishay General Semiconductor - Diodes Division

    735
    RFQ
    GBL10E-E3/A

    Datenblatt

    - 4-SIP, GBL Bulk Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBL
    T25JA05G-K

    T25JA05G-K

    BRIDGE RECT 1P 600V 25A TS-6P

    Taiwan Semiconductor Corporation

    1,500
    RFQ
    T25JA05G-K

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 25 A 1.15 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    T25JA06G-K

    T25JA06G-K

    BRIDGE RECT 1P 800V 25A TS-6P

    Taiwan Semiconductor Corporation

    1,500
    RFQ
    T25JA06G-K

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.15 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    T25JA07G-K

    T25JA07G-K

    BRIDGE RECT 1PHASE 1KV 25A TS-6P

    Taiwan Semiconductor Corporation

    1,438
    RFQ
    T25JA07G-K

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 25 A 1.15 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    PB1001

    PB1001

    BRIDGE RECT 1PHASE 100V 7A PB

    Diotec Semiconductor

    400
    RFQ
    PB1001

    Datenblatt

    - 4-Square, PB Bulk Active Single Phase Standard 100 V 7 A 1.2 V @ 5 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole PB
    RPM810_R2_00601

    RPM810_R2_00601

    BRIDGE RECT 1PHASE 1KV 8A M8

    Panjit International Inc.

    1,890
    RFQ
    RPM810_R2_00601

    Datenblatt

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1 kV 8 A 1.3 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount M8
    GBJ1004-BP

    GBJ1004-BP

    BRIDGE RECT 1PHASE 400V 10A GBJ

    Micro Commercial Co

    1,610
    RFQ
    GBJ1004-BP

    Datenblatt

    - 4-SIP, GBJ Tube Not For New Designs Single Phase Standard 400 V 10 A 1.05 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    KBJB1510_T0_00301

    KBJB1510_T0_00301

    GLASS PASSIVATED LOW PROFILE BRI

    Panjit International Inc.

    1,800
    RFQ
    KBJB1510_T0_00301

    Datenblatt

    - - Tube Active - - - - - - - - - - -
    TS10K60H

    TS10K60H

    BRIDGE RECT 1PHASE 600V 10A TS4K

    Taiwan Semiconductor Corporation

    1,000
    RFQ
    TS10K60H

    Datenblatt

    - 4-SIP, TS4K Tube Active Single Phase Standard 600 V 10 A 1.1 V @ 10 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS4K
    KBJ3510_T0_00601

    KBJ3510_T0_00601

    BRIDGE RECT 1PHASE 1KV 35A KBJ

    Panjit International Inc.

    9,902
    RFQ
    KBJ3510_T0_00601

    Datenblatt

    - 4-SIP, KBJ Tube Active Single Phase Standard 1 kV 35 A 1.1 V @ 35 A 5 µA @ 1 V -55°C ~ 150°C (TJ) - - Through Hole KBJ
    GBS4B

    GBS4B

    BRIDGE RECT 1P 100V 2.3A 4-SIL

    Diotec Semiconductor

    500
    RFQ
    GBS4B

    Datenblatt

    - 4-ESIP Bulk Active Single Phase Standard 100 V 2.3 A 1.05 V @ 2 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
    GBS4K

    GBS4K

    BRIDGE RECT 1P 800V 2.3A 4-SIL

    Diotec Semiconductor

    500
    RFQ
    GBS4K

    Datenblatt

    - 4-ESIP Bulk Active Single Phase Standard 800 V 2.3 A 1.05 V @ 2 A 5 µA @ 800 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
    GBS4J

    GBS4J

    BRIDGE RECT 1P 600V 2.3A 4-SIL

    Diotec Semiconductor

    490
    RFQ
    GBS4J

    Datenblatt

    - 4-ESIP Bulk Active Single Phase Standard 600 V 2.3 A 1.05 V @ 2 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
    B40C3700A

    B40C3700A

    BRIDGE RECT 1P 80V 2.7A 4-SIL

    Diotec Semiconductor

    484
    RFQ
    B40C3700A

    Datenblatt

    - 4-ESIP Box Active Single Phase Standard 80 V 2.7 A 1 V @ 3 A 5 µA @ 80 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
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