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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BU1210-E3/45

    BU1210-E3/45

    BRIDGE RECT 1PHASE 1KV 3.4A BU

    Vishay General Semiconductor - Diodes Division

    248
    RFQ
    BU1210-E3/45

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    GBU2505 D2

    GBU2505 D2

    BRIDGE RECT 1PHASE 600V 25A GBU

    Taiwan Semiconductor Corporation

    814
    RFQ
    GBU2505 D2

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 25 A 1.2 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    BU1508-E3/45

    BU1508-E3/45

    BRIDGE RECT 1PHASE 800V 3.4A BU

    Vishay General Semiconductor - Diodes Division

    860
    RFQ
    BU1508-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 800 V 3.4 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2506-E3/51

    BU2506-E3/51

    BRIDGE RECT 1PHASE 600V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    1,492
    RFQ
    BU2506-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2506-E3/45

    BU2506-E3/45

    BRIDGE RECT 1PHASE 600V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    780
    RFQ
    BU2506-E3/45

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2506-M3/45

    BU2506-M3/45

    BRIDGE RECT 1PHASE 600V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    753
    RFQ
    BU2506-M3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    DFB20100

    DFB20100

    BRIDGE RECT 1PHASE 1KV 20A TS-6P

    onsemi

    1,213
    RFQ
    DFB20100

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    BU2010-E3/51

    BU2010-E3/51

    BRIDGE RECT 1PHASE 1KV 3.5A BU

    Vishay General Semiconductor - Diodes Division

    1,658
    RFQ
    BU2010-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2010-E3/45

    BU2010-E3/45

    BRIDGE RECT 1PHASE 1KV 3.5A BU

    Vishay General Semiconductor - Diodes Division

    706
    RFQ
    BU2010-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2010-M3/45

    BU2010-M3/45

    BRIDGE RECT 1PHASE 1KV 20A BU

    Vishay General Semiconductor - Diodes Division

    439
    RFQ
    BU2010-M3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2508-E3/45

    BU2508-E3/45

    BRIDGE RECT 1PHASE 800V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    272
    RFQ
    BU2508-E3/45

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    PB3008-E3/45

    PB3008-E3/45

    BRIDGE RECT 1PHASE 800V 30A PB

    Vishay General Semiconductor - Diodes Division

    995
    RFQ
    PB3008-E3/45

    Datenblatt

    - 4-SIP, PB Tube Active Single Phase Standard 800 V 30 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
    GBPC2510W

    GBPC2510W

    BRIDGE RECT 1P 1KV 25A GBPC-W

    GeneSiC Semiconductor

    650
    RFQ
    GBPC2510W

    Datenblatt

    - 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    GBPC2506T

    GBPC2506T

    BRIDGE RECT 1PHASE 600V 25A GBPC

    GeneSiC Semiconductor

    305
    RFQ
    GBPC2506T

    Datenblatt

    - 4-Square, GBPC Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
    DFB2580

    DFB2580

    BRIDGE RECT 1P 800V 25A TS-6P

    onsemi

    284
    RFQ
    DFB2580

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBU6J-E4/51

    KBU6J-E4/51

    BRIDGE RECT 1PHASE 600V 6A KBU

    Vishay General Semiconductor - Diodes Division

    429
    RFQ
    KBU6J-E4/51

    Datenblatt

    - 4-SIP, KBU Bulk Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole KBU
    KBU6M-E4/51

    KBU6M-E4/51

    BRIDGE RECT 1PHASE 1KV 6A KBU

    Vishay General Semiconductor - Diodes Division

    292
    RFQ
    KBU6M-E4/51

    Datenblatt

    - 4-SIP, KBU Bulk Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) - - Through Hole KBU
    KBU6B-E4/51

    KBU6B-E4/51

    BRIDGE RECT 1PHASE 100V 6A KBU

    Vishay General Semiconductor - Diodes Division

    173
    RFQ
    KBU6B-E4/51

    Datenblatt

    - 4-SIP, KBU Bulk Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole KBU
    GBPC3508-G

    GBPC3508-G

    BRIDGE RECT 1PHASE 800V 35A GBPC

    Comchip Technology

    490
    RFQ
    GBPC3508-G

    Datenblatt

    - 4-Square, GBPC Tray Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
    GBPC12005-E4/51

    GBPC12005-E4/51

    BRIDGE RECT 1P 50V 12A GBPC-W

    Vishay General Semiconductor - Diodes Division

    186
    RFQ
    GBPC12005-E4/51

    Datenblatt

    - 4-Square, GBPC-W Box Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
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