Bomkey (HK) Elektronik GmbH!

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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    CBR1-D040S TR13 PBFREE

    CBR1-D040S TR13 PBFREE

    BRIDGE RECT 1P 400V 1A 4-SMDIP

    Central Semiconductor Corp

    177
    RFQ
    CBR1-D040S TR13 PBFREE

    Datenblatt

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 10 µA @ 400 V -65°C ~ 150°C (TJ) - - Surface Mount 4-SMDIP
    VS-2KBB60

    VS-2KBB60

    BRIDGE RECT 1P 600V 1.9A 2KBB

    Vishay General Semiconductor - Diodes Division

    473
    RFQ
    VS-2KBB60

    Datenblatt

    - 4-SIP, 2KBB Bulk Active Single Phase Standard 600 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 600 V -40°C ~ 150°C (TJ) - - Through Hole 2KBB
    GBJ25MI_T0_00101

    GBJ25MI_T0_00101

    BRIDGE RECT 1PHASE 1KV 25A GBJ-1

    Panjit International Inc.

    737
    RFQ
    GBJ25MI_T0_00101

    Datenblatt

    - 4-SIP, GBJ Tube Not For New Designs Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ-1
    GBU10K-BP

    GBU10K-BP

    BRIDGE RECT 1PHASE 800V 10A GBU

    Micro Commercial Co

    1,505
    RFQ
    GBU10K-BP

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBJ806-BP

    GBJ806-BP

    BRIDGE RECT 1PHASE 600V 8A GBJ

    Micro Commercial Co

    1,499
    RFQ
    GBJ806-BP

    Datenblatt

    - 4-SIP, GBJ Tube Active Single Phase Standard 600 V 8 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C - - Through Hole GBJ
    GBU4KL-BP

    GBU4KL-BP

    BRIDGE RECT 1PHASE 800V 4A GBU

    Micro Commercial Co

    1,360
    RFQ
    GBU4KL-BP

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 800 V 4 A 900 mV @ 4 A 10 µA @ 800 V -55°C ~ 150°C - - Through Hole GBU
    GBU4G-E3/45

    GBU4G-E3/45

    BRIDGE RECT 1PHASE 400V 3A GBU

    Vishay General Semiconductor - Diodes Division

    330
    RFQ
    GBU4G-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU4K-E3/51

    GBU4K-E3/51

    BRIDGE RECT 1PHASE 800V 3A GBU

    Vishay General Semiconductor - Diodes Division

    244
    RFQ
    GBU4K-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    VS-2KBB100R

    VS-2KBB100R

    BRIDGE RECT 1PHASE 1KV 1.9A 2KBB

    Vishay General Semiconductor - Diodes Division

    227
    RFQ
    VS-2KBB100R

    Datenblatt

    - 4-SIP, 2KBB Bulk Active Single Phase Standard 1 kV 1.9 A - - -40°C ~ 150°C (TJ) - - Through Hole 2KBB
    VS-2KBB20R

    VS-2KBB20R

    BRIDGE RECT 1P 200V 1.9A 2KBB

    Vishay General Semiconductor - Diodes Division

    541
    RFQ
    VS-2KBB20R

    Datenblatt

    - 4-SIP, 2KBB Bulk Active Single Phase Standard 200 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 200 V -40°C ~ 150°C (TJ) - - Through Hole 2KBB
    GBU6J-E3/51

    GBU6J-E3/51

    BRIDGE RECT 1PHASE 600V 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    574
    RFQ
    GBU6J-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU6B-E3/51

    GBU6B-E3/51

    BRIDGE RECT 1PHASE 100V 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    380
    RFQ
    GBU6B-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 100 V 3.8 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    TS35P07G

    TS35P07G

    BRIDGE RECT 1PHASE 1KV 35A TS-6P

    Taiwan Semiconductor Corporation

    202
    RFQ
    TS35P07G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBPC5006-BP

    GBPC5006-BP

    BRIDGE RECT 1PHASE 600V 50A GBPC

    Micro Commercial Co

    382
    RFQ
    GBPC5006-BP

    Datenblatt

    - 4-Square, GBPC Bulk Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
    GBU6G

    GBU6G

    BRIDGE RECT 1PHASE 400V 6A GBU

    onsemi

    2,032
    RFQ
    GBU6G

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    TS35P05G

    TS35P05G

    BRIDGE RECT 1P 600V 35A TS-6P

    Taiwan Semiconductor Corporation

    776
    RFQ
    TS35P05G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    VS-2KBB10R

    VS-2KBB10R

    BRIDGE RECT 1P 100V 1.9A 2KBB

    Vishay General Semiconductor - Diodes Division

    479
    RFQ
    VS-2KBB10R

    Datenblatt

    - 4-SIP, 2KBB Bulk Active Single Phase Standard 100 V 1.9 A - - -40°C ~ 150°C (TJ) - - Through Hole 2KBB
    GBU8J-E3/45

    GBU8J-E3/45

    BRIDGE RECT 1PHASE 600V 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    646
    RFQ
    GBU8J-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU8B-E3/51

    GBU8B-E3/51

    BRIDGE RECT 1PHASE 100V 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    289
    RFQ
    GBU8B-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 100 V 3.9 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU8M-E3/45

    GBU8M-E3/45

    BRIDGE RECT 1PHASE 1KV 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    612
    RFQ
    GBU8M-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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