Bomkey (HK) Elektronik GmbH!

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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    VS-KBPC608PBF

    VS-KBPC608PBF

    BRIDGE RECT 1PHASE 800V 6A D-72

    Vishay General Semiconductor - Diodes Division

    2,038
    RFQ
    VS-KBPC608PBF

    Datenblatt

    VS-KBPC6 4-Square, D-72 Bulk Active Single Phase Standard 800 V 6 A 1.2 V @ 3 A 10 µA @ 800 V -40°C ~ 150°C (TJ) - - Through Hole D-72
    TS25P06G

    TS25P06G

    BRIDGE RECT 1P 800V 25A TS-6P

    Taiwan Semiconductor Corporation

    990
    RFQ
    TS25P06G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBJ2510-F

    GBJ2510-F

    BRIDGE RECT 1PHASE 1KV 25A GBJ

    Diodes Incorporated

    1,060
    RFQ
    GBJ2510-F

    Datenblatt

    - 4-SIP, GBJ Tube Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
    GBPC606-E4/51

    GBPC606-E4/51

    BRIDGE RECT 1PHASE 600V 3A GBPC6

    Vishay General Semiconductor - Diodes Division

    875
    RFQ
    GBPC606-E4/51

    Datenblatt

    - 4-Square, GBPC-6 Bulk Active Single Phase Standard 600 V 3 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC6
    KBPC3510FP

    KBPC3510FP

    BRIDGE RECT 1P 1KV 35A KBPC35

    Diotec Semiconductor

    327
    RFQ
    KBPC3510FP

    Datenblatt

    - 4-Square, KBPC35 Box Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -50°C ~ 150°C (TJ) - - Chassis Mount KBPC35
    TS50P05G

    TS50P05G

    BRIDGE RECT 1P 600V 50A TS-6P

    Taiwan Semiconductor Corporation

    947
    RFQ
    TS50P05G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBU8J

    GBU8J

    BRIDGE RECT 1PHASE 600V 8A GBU

    onsemi

    676
    RFQ
    GBU8J

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 8 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    VS-KBPC804PBF

    VS-KBPC804PBF

    BRIDGE RECT 1PHASE 400V 8A D-72

    Vishay General Semiconductor - Diodes Division

    254
    RFQ
    VS-KBPC804PBF

    Datenblatt

    VS-KBPC8 4-Square, D-72 Bulk Active Single Phase Standard 400 V 8 A 1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole D-72
    PB5010-E3/45

    PB5010-E3/45

    BRIDGE RECT 1PHASE 1KV 4.5A PB

    Vishay General Semiconductor - Diodes Division

    13,083
    RFQ
    PB5010-E3/45

    Datenblatt

    isoCink+™ 4-SIP, PB Tube Active Single Phase Standard 1 kV 4.5 A 1.1 V @ 22.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
    PB5008-E3/45

    PB5008-E3/45

    BRIDGE RECT 1PHASE 800V 45A PB

    Vishay General Semiconductor - Diodes Division

    4,405
    RFQ
    PB5008-E3/45

    Datenblatt

    - 4-SIP, PB Tube Active Single Phase Standard 800 V 45 A 1.1 V @ 22.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
    PB5006-E3/45

    PB5006-E3/45

    BRIDGE RECT 1PHASE 600V 45A PB

    Vishay General Semiconductor - Diodes Division

    3,584
    RFQ
    PB5006-E3/45

    Datenblatt

    isoCink+™ 4-SIP, PB Tube Active Single Phase Standard 600 V 45 A 1.1 V @ 22.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
    MB251W-BP

    MB251W-BP

    BRIDGE RECT 1P 100V 25A MB-35W

    Micro Commercial Co

    565
    RFQ
    MB251W-BP

    Datenblatt

    - 4-Square, MB-35W Bulk Not For New Designs Single Phase Standard 100 V 25 A 1.2 V @ 12.5 A 10 µA @ 100 V -55°C ~ 125°C (TJ) - - Through Hole MB-35W
    GBPC604-E4/51

    GBPC604-E4/51

    BRIDGE RECT 1PHASE 400V 3A GBPC6

    Vishay General Semiconductor - Diodes Division

    633
    RFQ
    GBPC604-E4/51

    Datenblatt

    - 4-Square, GBPC-6 Box Active Single Phase Standard 400 V 3 A 1 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBPC6
    GBPC2506-BP

    GBPC2506-BP

    BRIDGE RECT 1PHASE 600V 25A GBPC

    Micro Commercial Co

    610
    RFQ
    GBPC2506-BP

    Datenblatt

    - 4-Square, GBPC Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC
    TS50P07G

    TS50P07G

    BRIDGE RECT 1PHASE 1KV 50A TS-6P

    Taiwan Semiconductor Corporation

    5,624
    RFQ
    TS50P07G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 50 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBU8K-E4/51

    KBU8K-E4/51

    BRIDGE RECT 1PHASE 800V 8A KBU

    Vishay General Semiconductor - Diodes Division

    2,175
    RFQ
    KBU8K-E4/51

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 800 V 8 A 1 V @ 8 A 10 µA @ 800 V -50°C ~ 150°C (TJ) - - Through Hole KBU
    KBL04-E4/51

    KBL04-E4/51

    BRIDGE RECT 1PHASE 400V 4A KBL

    Vishay General Semiconductor - Diodes Division

    7,678
    RFQ
    KBL04-E4/51

    Datenblatt

    - 4-SIP, KBL Bulk Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) - - Through Hole KBL
    PB3506-E3/45

    PB3506-E3/45

    BRIDGE RECT 1PHASE 600V 35A PB

    Vishay General Semiconductor - Diodes Division

    2,872
    RFQ
    PB3506-E3/45

    Datenblatt

    isoCink+™ 4-SIP, PB Tube Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
    GSIB2580N-M3/45

    GSIB2580N-M3/45

    BRIDGE RECT 1P 800V 25A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    483
    RFQ
    GSIB2580N-M3/45

    Datenblatt

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    PB3010-E3/45

    PB3010-E3/45

    BRIDGE RECT 1PHASE 1KV 30A PB

    Vishay General Semiconductor - Diodes Division

    960
    RFQ
    PB3010-E3/45

    Datenblatt

    isoCink+™ 4-SIP, PB Tube Active Single Phase Standard 1 kV 30 A 1.1 V @ 15 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ PB
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