Bomkey (HK) Elektronik GmbH!

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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    KBU606G

    KBU606G

    BRIDGE RECT 1PHASE 800V 6A KBU

    Taiwan Semiconductor Corporation

    150
    RFQ
    KBU606G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    GBU3510_T0_00601

    GBU3510_T0_00601

    BRIDGE RECT 1PHASE 1KV 35A GBU-2

    Panjit International Inc.

    980
    RFQ
    GBU3510_T0_00601

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU-2
    VS-2KBP04

    VS-2KBP04

    BRIDGE RECT 1PHASE 400V 2A D-44

    Vishay General Semiconductor - Diodes Division

    560
    RFQ
    VS-2KBP04

    Datenblatt

    VS-2KBP 4-SIP, D-44 Bulk Active Single Phase Standard 400 V 2 A 1 V @ 1 A 10 µA @ 400 V -40°C ~ 150°C (TJ) - - Through Hole D-44
    GBU6J

    GBU6J

    BRIDGE RECT 1PHASE 600V 6A GBU

    onsemi

    1,020
    RFQ
    GBU6J

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU6K

    GBU6K

    BRIDGE RECT 1PHASE 800V 6A GBU

    onsemi

    267
    RFQ
    GBU6K

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 6 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    Z4DGP410L-HF

    Z4DGP410L-HF

    BRIDGE RECT 1PHASE 1KV 4A Z4-D

    Comchip Technology

    41,181
    RFQ
    Z4DGP410L-HF

    Datenblatt

    - Z4-D Tape & Reel (TR) Active Single Phase Standard 1 kV 4 A 950 mV @ 4 A 5 µA @ 1000 V -55°C ~ 175°C (TJ) - - Surface Mount Z4-D
    SBS34

    SBS34

    BRIDGE RECT 1PHASE 40V 3A ABS

    Taiwan Semiconductor Corporation

    4,697
    RFQ
    SBS34

    Datenblatt

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 40 V 3 A 500 mV @ 3 A 500 µA @ 40 V -55°C ~ 150°C (TJ) - - Surface Mount ABS
    GBU410

    GBU410

    BRIDGE RECT 1PHASE 1KV 4A GBU

    Diodes Incorporated

    37,132
    RFQ
    GBU410

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 1 kV 4 A 1 V @ 2 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GSIB1560-E3/45

    GSIB1560-E3/45

    BRIDGE RECT 1P 600V 3.5A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    5,577
    RFQ
    GSIB1560-E3/45

    Datenblatt

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 600 V 3.5 A 950 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    GBU4M-E3/51

    GBU4M-E3/51

    BRIDGE RECT 1PHASE 1KV 3A GBU

    Vishay General Semiconductor - Diodes Division

    825
    RFQ
    GBU4M-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU4J-E3/45

    GBU4J-E3/45

    BRIDGE RECT 1PHASE 600V 3A GBU

    Vishay General Semiconductor - Diodes Division

    798
    RFQ
    GBU4J-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    BR1006SG-G

    BR1006SG-G

    BRIDGE RECT 1PHASE 600V 10A BR-8

    Comchip Technology

    2,358
    RFQ
    BR1006SG-G

    Datenblatt

    - 4-Square, BR-8 Bulk Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Chassis Mount BR-8
    GBJ3506-BP

    GBJ3506-BP

    BRIDGE RECT 1PHASE 600V 35A GBJ

    Micro Commercial Co

    11,436
    RFQ
    GBJ3506-BP

    Datenblatt

    - 4-SIP, GBJ Tube Active Single Phase Standard 600 V 35 A 1.05 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBU1006

    GBU1006

    BRIDGE RECT 1PHASE 600V 10A GBU

    Diodes Incorporated

    2,671
    RFQ
    GBU1006

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 10 A 1 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    KBU6D-E4/51

    KBU6D-E4/51

    BRIDGE RECT 1PHASE 200V 6A KBU

    Vishay General Semiconductor - Diodes Division

    338
    RFQ
    KBU6D-E4/51

    Datenblatt

    - 4-SIP, KBU Bulk Active Single Phase Standard 200 V 6 A 1 V @ 6 A 5 µA @ 200 V -50°C ~ 150°C (TJ) - - Through Hole KBU
    GBJ3510_T0_00601

    GBJ3510_T0_00601

    BRIDGE RECT 1PHASE 1KV 35A GBJ-2

    Panjit International Inc.

    1,028
    RFQ
    GBJ3510_T0_00601

    Datenblatt

    - 4-SIP, GBJ Tube Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C - - Through Hole GBJ-2
    GBU4B

    GBU4B

    BRIDGE RECT 1PHASE 100V 4A GBU

    onsemi

    765
    RFQ
    GBU4B

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    TS25P05G

    TS25P05G

    BRIDGE RECT 1P 600V 25A TS-6P

    Taiwan Semiconductor Corporation

    7,336
    RFQ
    TS25P05G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 25 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBJ2508-F

    GBJ2508-F

    BRIDGE RECT 1PHASE 800V 25A GBJ

    Diodes Incorporated

    3,490
    RFQ
    GBJ2508-F

    Datenblatt

    - 4-SIP, GBJ Tube Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
    GBU8K

    GBU8K

    BRIDGE RECT 1PHASE 800V 8A GBU

    onsemi

    1,039
    RFQ
    GBU8K

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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