Bomkey (HK) Elektronik GmbH - JFETs - Transistors - Seite 3 - Originalquelle der Waren - BomKey Elektronik – Spezialist für die Herstellung und Service von elektronischen Komponenten

Hersteller-Teilenr.	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	FET-Typ	Spannung - Durchschlag (V(BR)GSS)	Drain-Source-Spannung (Vdss)	Strom - Drain (Idss) @ Vds (Vgs=0)	Strom Drain (Id) - Max	Spannung - Cutoff (VGS aus) @ Id	Eingangskapazität (Ciss) (Max) @ Vds	Widerstand - RDS(Ein)	Leistung – Max	Betriebstemperatur	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket
BSR57 JFET N-CH 40V SOT23-3 onsemi	13,430	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	40 V	-	20 mA @ 15 V	-	2 V @ 0.5 nA	-	40 Ohms	250 mW	150°C (TJ)	-	-	Surface Mount	SOT-23-3
J112 JFET N-CH 35V TO92-3 onsemi	9,601	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
J111-D26Z JFET N-CH 35V TO92-3 onsemi	46,427	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Reel (TR)	Active	N-Channel	35 V	-	20 mA @ 15 V	-	3 V @ 1 µA	-	30 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
J112-D26Z JFET N-CH 35V TO92-3 onsemi	8,628	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Reel (TR)	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
J112-D27Z JFET N-CH 35V TO92-3 onsemi	8,000	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Reel (TR)	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
2SK208-GR(TE85L,F) JFET N-CH 50V 6.5MA SC59 Toshiba Semiconductor and Storage	8,204	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	2.6 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	SC-59
2SK208-Y(TE85L,F) JFET N-CH 50V 6.5MA SMINI Toshiba Semiconductor and Storage	7,363	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	1.2 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	S-Mini
J176-D74Z JFET P-CH 30V TO92-3 onsemi	5,824	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Cut Tape (CT)	Active	P-Channel	30 V	-	2 mA @ 15 V	-	1 V @ 10 nA	-	250 Ohms	350 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
2SK208-O(TE85L,F) JFET N-CH 50V 6.5MA SC59 Toshiba Semiconductor and Storage	3,387	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	600 µA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	SC-59
2SK208-R(TE85L,F) JFET N-CH 50V 6.5MA SMINI Toshiba Semiconductor and Storage	22,639	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	300 µA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	S-Mini
2SK879-Y(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	19,765	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	N-Channel	-	-	1.2 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	USM
2SK879-GR(TE85L,F) JFET N-CH USM Toshiba Semiconductor and Storage	1,360	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	N-Channel	-	-	2.6 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	-	-	Surface Mount	USM
J109 JFET N-CH 25V TO92-3 onsemi	17,525	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Active	N-Channel	25 V	-	40 mA @ 15 V	-	2 V @ 10 nA	-	12 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
MMBFJ110 JFET N-CH 25V SOT23-3 onsemi	8,134	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	25 V	-	10 mA @ 15 V	-	4 V @ 10 nA	-	18 Ohms	460 mW	150°C (TJ)	-	-	Surface Mount	SOT-23-3
2SK3557-6-TB-E JFET N-CH 5V 3CP onsemi	7,692	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	15 V	15 V	20 mA @ 5 V	50 mA	1.5 V @ 100 µA	10pF @ 5V	-	200 mW	150°C (TJ)	-	-	Surface Mount	3-CP
2SK209-Y(TE85L,F) JFET N-CH 50V 14MA SC59 Toshiba Semiconductor and Storage	23,472	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	14 mA @ 10 V	14 mA	1.5 V @ 100 nA	13pF @ 10V	-	150 mW	125°C (TJ)	-	-	Surface Mount	SC-59
2SK209-GR(TE85L,F) JFET N-CH 50V 14MA SC59 Toshiba Semiconductor and Storage	11,831	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	50 V	-	14 mA @ 10 V	14 mA	1.5 V @ 100 nA	13pF @ 10V	-	150 mW	125°C (TJ)	-	-	Surface Mount	SC-59
J109-D26Z JFET N-CH 25V TO92-3 onsemi	2,777	-	RFQ	Datenblatt	-	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Tape & Reel (TR)	Active	N-Channel	25 V	-	40 mA @ 15 V	-	2 V @ 10 nA	-	12 Ohms	625 mW	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
2SK932-24-TB-E JFET N-CH 50MA SMCP onsemi	7,618	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	-	15 V	14.5 mA @ 5 V	50 mA	200 mV @ 100 µA	-	-	200 mW	150°C (TJ)	-	-	Surface Mount	SMCP
MMBFJ108 JFET N-CH 25V SOT23-3 onsemi	10,147	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	25 V	-	80 mA @ 15 V	-	3 V @ 10 nA	-	8 Ohms	350 mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3

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