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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
    HS3B

    HS3B

    DIODE GEN PURP 100V 3A DO214AB

    Taiwan Semiconductor Corporation

    7,743
    RFQ
    HS3B

    Datenblatt

    - DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 3A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
    US1A

    US1A

    DIODE GEN PURP 50V 1A DO214AC

    Taiwan Semiconductor Corporation

    7,328
    RFQ
    US1A

    Datenblatt

    - DO-214AC, SMA Tape & Reel (TR) Active Standard 50 V 1A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 15pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
    ES1A

    ES1A

    DIODE GEN PURP 50V 1A DO214AC

    Taiwan Semiconductor Corporation

    3,410
    RFQ
    ES1A

    Datenblatt

    - DO-214AC, SMA Tape & Reel (TR) Active Standard 50 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 50 V 16pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
    S3B

    S3B

    DIODE GEN PURP 100V 3A DO214AB

    Taiwan Semiconductor Corporation

    9,069
    RFQ
    S3B

    Datenblatt

    - DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 3A 1.15 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V 60pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
    ES1C

    ES1C

    DIODE GEN PURP 150V 1A DO214AC

    Taiwan Semiconductor Corporation

    9,117
    RFQ
    ES1C

    Datenblatt

    - DO-214AC, SMA Tape & Reel (TR) Active Standard 150 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 150 V 16pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
    SS15H

    SS15H

    DIODE SCHOTTKY 50V 1A DO214AC

    Taiwan Semiconductor Corporation

    8,376
    RFQ
    SS15H

    Datenblatt

    - DO-214AC, SMA Tape & Reel (TR) Active Schottky 50 V 1A 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 50 V - Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 150°C
    SS35H

    SS35H

    DIODE SCHOTTKY 50V 3A DO214AB

    Taiwan Semiconductor Corporation

    4,531
    RFQ
    SS35H

    Datenblatt

    - DO-214AB, SMC Tape & Reel (TR) Active Schottky 50 V 3A 750 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 50 V - Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
    SK55CH

    SK55CH

    DIODE SCHOTTKY 50V 5A DO214AB

    Taiwan Semiconductor Corporation

    3,526
    RFQ
    SK55CH

    Datenblatt

    - DO-214AB, SMC Tape & Reel (TR) Active Schottky 50 V 5A 750 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 50 V - Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
    ES3B

    ES3B

    DIODE GEN PURP 100V 3A DO214AB

    Taiwan Semiconductor Corporation

    2,037
    RFQ
    ES3B

    Datenblatt

    - DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 3A 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 45pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
    NCD225E75F8M1

    NCD225E75F8M1

    DIODE GEN PURP 750V 225A WAFER

    onsemi

    5,609
    RFQ
    NCD225E75F8M1

    Datenblatt

    - Die Tape & Reel (TR) Obsolete Standard 750 V 225A 1.95 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 223 ns 30 µA @ 750 V - Automotive AEC-Q101 Surface Mount Wafer -40°C ~ 175°C
    SR1202

    SR1202

    DIODE SCHOTTKY 20V 12A DO201AD

    Taiwan Semiconductor Corporation

    3,932
    RFQ
    SR1202

    Datenblatt

    - DO-201AD, Axial Tape & Reel (TR) Active Schottky 20 V 12A 550 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - - - Through Hole DO-201AD -55°C ~ 150°C
    HER303G

    HER303G

    DIODE GEN PURP 200V 3A DO201AD

    Taiwan Semiconductor Corporation

    8,835
    RFQ
    HER303G

    Datenblatt

    - DO-201AD, Axial Tape & Reel (TR) Active Standard 200 V 3A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 60pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
    MBR1045

    MBR1045

    DIODE SCHOTTKY 45V 10A TO220AC

    Taiwan Semiconductor Corporation

    6,381
    RFQ
    MBR1045

    Datenblatt

    - TO-220-2 Tube Active Schottky 45 V 10A 700 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - - - Through Hole TO-220AC -55°C ~ 150°C
    HER301G

    HER301G

    DIODE GEN PURP 50V 3A DO201AD

    Taiwan Semiconductor Corporation

    3,399
    RFQ
    HER301G

    Datenblatt

    - DO-201AD, Axial Tape & Reel (TR) Active Standard 50 V 3A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 60pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
    UF4001

    UF4001

    DIODE GEN PURP 50V 1A DO204AL

    Taiwan Semiconductor Corporation

    3,853
    RFQ
    UF4001

    Datenblatt

    - DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 50 V 1A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 17pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    6A60GH A0G

    6A60GH A0G

    DIODE GEN PURP 600V 6A R-6

    Taiwan Semiconductor Corporation

    7,068
    RFQ
    6A60GH A0G

    Datenblatt

    - R-6, Axial Tape & Reel (TR) Active Standard 600 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
    SR202

    SR202

    DIODE SCHOTTKY 20V 2A DO204AC

    Taiwan Semiconductor Corporation

    5,784
    RFQ
    SR202

    Datenblatt

    - DO-204AC, DO-15, Axial Tape & Reel (TR) Active Schottky 20 V 2A 550 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - - - Through Hole DO-204AC (DO-15) -55°C ~ 125°C
    FR301G

    FR301G

    DIODE GEN PURP 50V 3A DO201AD

    Taiwan Semiconductor Corporation

    5,714
    RFQ
    FR301G

    Datenblatt

    - DO-201AD, Axial Tape & Reel (TR) Active Standard 50 V 3A 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 30pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
    SR002

    SR002

    DIODE SCHOTTKY 20V 500MA DO204AL

    Taiwan Semiconductor Corporation

    9,220
    RFQ
    SR002

    Datenblatt

    - DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 20 V 500mA 550 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V 110pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 125°C
    HER601G

    HER601G

    DIODE GEN PURP 50V 6A R-6

    Taiwan Semiconductor Corporation

    2,957
    RFQ
    HER601G

    Datenblatt

    - R-6, Axial Tape & Reel (TR) Active Standard 50 V 6A 1 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
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