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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
    NXPSC16650B6J

    NXPSC16650B6J

    DIODE SIL CARBIDE 650V 16A D2PAK

    WeEn Semiconductors

    3,106
    RFQ
    NXPSC16650B6J

    Datenblatt

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
    WNSC04650T6J

    WNSC04650T6J

    DIODE SIL CARBIDE 650V 4A 5DFN

    WeEn Semiconductors

    4,442
    RFQ
    WNSC04650T6J

    Datenblatt

    - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 141pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
    NXPSC12650B6J

    NXPSC12650B6J

    DIODE SIL CARBIDE 650V 12A D2PAK

    WeEn Semiconductors

    2,892
    RFQ
    NXPSC12650B6J

    Datenblatt

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 380pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
    WNSC10650T6J

    WNSC10650T6J

    DIODE SIL CARBIDE 650V 10A 5DFN

    WeEn Semiconductors

    7,135
    RFQ
    WNSC10650T6J

    Datenblatt

    - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
    WNSC08650T6J

    WNSC08650T6J

    DIODE SIL CARBIDE 650V 8A 5DFN

    WeEn Semiconductors

    8,999
    RFQ
    WNSC08650T6J

    Datenblatt

    - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 267pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
    VS-C20CP07L-M3

    VS-C20CP07L-M3

    DIODE SIL CARB 650V 10A TO220AC

    Vishay General Semiconductor - Diodes Division

    5,592
    RFQ
    VS-C20CP07L-M3

    Datenblatt

    - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 55 µA @ 650 V 430pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
    VS-C16CP07L-M3

    VS-C16CP07L-M3

    DIODE SIL CARB 650V 16A TO220AC

    Vishay General Semiconductor - Diodes Division

    6,963
    RFQ
    VS-C16CP07L-M3

    Datenblatt

    - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 85 µA @ 650 V 320pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
    SM4001-CT

    SM4001-CT

    DIODE GP 50V 1A MELF DO-213AB

    Diotec Semiconductor

    8,040
    RFQ
    SM4001-CT

    Datenblatt

    - DO-213AB, MELF Strip Active Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 50 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
    P2500X-CT

    P2500X-CT

    DIODE AVALANCHE 1.8KV 25A P600

    Diotec Semiconductor

    9,312
    RFQ
    P2500X-CT

    Datenblatt

    - P600, Axial Strip Active Avalanche 1800 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1.8 V - - - Through Hole P600 -55°C ~ 175°C
    1N4005GP-AQ-CT

    1N4005GP-AQ-CT

    DIODE GEN PURP 600V 1A DO41

    Diotec Semiconductor

    4,442
    RFQ
    1N4005GP-AQ-CT

    Datenblatt

    - DO-204AC, DO-41, Axial Strip Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Through Hole DO-204AC (DO-41) -50°C ~ 175°C
    SM5406-CT

    SM5406-CT

    DIODE GP 600V 3A MELF DO-213AB

    Diotec Semiconductor

    8,271
    RFQ
    SM5406-CT

    Datenblatt

    - DO-213AB, MELF Strip Active Standard 600 V 3A 1.2 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
    SM4007-CT

    SM4007-CT

    DIODE GP 1KV 1A MELF DO-213AB

    Diotec Semiconductor

    2,031
    RFQ
    SM4007-CT

    Datenblatt

    - DO-213AB, MELF Strip Active Standard 1000 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
    BY550-50-CT

    BY550-50-CT

    DIODE GEN PURP 50V 5A DO201

    Diotec Semiconductor

    7,342
    RFQ
    BY550-50-CT

    Datenblatt

    - DO-201AA, DO-27, Axial Strip Active Standard 50 V 5A 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 50 V - - - Through Hole DO-201 -50°C ~ 175°C
    SM4003-CT

    SM4003-CT

    DIODE GP 200V 1A MELF DO-213AB

    Diotec Semiconductor

    4,618
    RFQ
    SM4003-CT

    Datenblatt

    - DO-213AB, MELF Strip Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 200 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
    P600G-CT

    P600G-CT

    DIODE GEN PURP 400V 6A P600

    Diotec Semiconductor

    7,066
    RFQ
    P600G-CT

    Datenblatt

    - P600, Axial Strip Active Standard 400 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 400 V - - - Through Hole P600 -50°C ~ 150°C
    SM4002-CT

    SM4002-CT

    DIODE GP 100V 1A MELF DO-213AB

    Diotec Semiconductor

    3,475
    RFQ
    SM4002-CT

    Datenblatt

    - DO-213AB, MELF Strip Active Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
    GL34B-CT

    GL34B-CT

    DIODE GP 100V 500MA DO213AA

    Diotec Semiconductor

    2,178
    RFQ
    GL34B-CT

    Datenblatt

    - DO-213AA Strip Active Standard 100 V 500mA 1.2 V @ 500 mA Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - - - Surface Mount DO-213AA (MINIMELF) -50°C ~ 175°C
    P600B-CT

    P600B-CT

    DIODE GEN PURP 100V 6A P600

    Diotec Semiconductor

    6,465
    RFQ
    P600B-CT

    Datenblatt

    - P600, Axial Strip Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V - - - Through Hole P600 -50°C ~ 175°C
    BY550-200-CT

    BY550-200-CT

    DIODE GEN PURP 200V 5A DO201

    Diotec Semiconductor

    7,792
    RFQ
    BY550-200-CT

    Datenblatt

    - DO-201AA, DO-27, Axial Strip Active Standard 200 V 5A 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 200 V - - - Through Hole DO-201 -50°C ~ 175°C
    BY133-CT

    BY133-CT

    DIODE GEN PURP 1.3KV 1A DO41

    Diotec Semiconductor

    9,567
    RFQ
    BY133-CT

    Datenblatt

    - DO-204AC, DO-41, Axial Strip Active Standard 1300 V 1A 1.3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1.3 V - - - Through Hole DO-204AC (DO-41) -50°C ~ 175°C
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