Bomkey (HK) Elektronik GmbH!

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alle zurücksetzen
    Alle anwenden
    Ergebnis
    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVTFS5826NLWFTWG-UM

    NVTFS5826NLWFTWG-UM

    MOSFET N-CH 60V 7.6A 8WDFN

    onsemi

    2,803
    RFQ
    NVTFS5826NLWFTWG-UM

    Datenblatt

    - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7.6A (Ta) 4.5V, 10V 24mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    APL602LG-1

    APL602LG-1

    MOSFET LINEAR 600 V 49 A TO-264

    Microchip Technology

    6,828
    RFQ
    APL602LG-1

    Datenblatt

    - TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 12V 125mOhm @ 24.5A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
    SIHFU024-GE3

    SIHFU024-GE3

    LOGIC MOSFET N-CHANNEL 60V

    Vishay Siliconix

    7,731
    RFQ
    SIHFU024-GE3

    Datenblatt

    - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    SQ2308FES-T1_GE3

    SQ2308FES-T1_GE3

    MOSFET N-CH 60V 2.3A SOT23

    Vishay Siliconix

    8,173
    RFQ
    SQ2308FES-T1_GE3

    Datenblatt

    TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 150mOhm @ 2.3A, 10V 2.5V @ 250µA 5.3 nC @ 10 V ±20V 205 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
    SQ2319CES-T1_GE3

    SQ2319CES-T1_GE3

    MOSFET P-CH 40V 4.6A SOT23-3

    Vishay Siliconix

    7,670
    RFQ
    SQ2319CES-T1_GE3

    Datenblatt

    TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 620 pF @ 20 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
    SSM3J35FS,LF

    SSM3J35FS,LF

    SMALL LOW RON PCH MOSFETS VDSS:-

    Toshiba Semiconductor and Storage

    3,833
    RFQ
    SSM3J35FS,LF

    Datenblatt

    - SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount SSM
    SSM3K121TU,LF

    SSM3K121TU,LF

    MOSFET N-CH 20V 3.2A ES6

    Toshiba Semiconductor and Storage

    2,154
    RFQ
    SSM3K121TU,LF

    Datenblatt

    - 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UFM
    SQ2337CES-T1_GE3

    SQ2337CES-T1_GE3

    MOSFET P-CH 80V 2.2A SOT23-3

    Vishay Siliconix

    5,274
    RFQ
    SQ2337CES-T1_GE3

    Datenblatt

    TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 290mOhm @ 1.2A, 10V 2.5V @ 250µA 18 nC @ 40 V ±20V 620 pF @ 40 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
    SQJ166ELP-T1_GE3

    SQJ166ELP-T1_GE3

    MOSFET N-CH 50V 50A TO252AA

    Vishay Siliconix

    9,906
    RFQ
    SQJ166ELP-T1_GE3

    Datenblatt

    TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 67A (Tc) 4.5V, 10V 9.7mOhm @ 20A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1903 pF @ 25 V - 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQS124ELNW-T1_GE3

    SQS124ELNW-T1_GE3

    MOSFET N-CH 30V 100A TO252AA

    Vishay Siliconix

    7,710
    RFQ
    SQS124ELNW-T1_GE3

    Datenblatt

    TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 107A (Tc) 4.5V, 10V 3mOhm @ 10A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 2945 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
    SIS5712DN-T1-GE3

    SIS5712DN-T1-GE3

    MOSFET N-CH 150V 2.2A PPAK1212-8

    Vishay Siliconix

    6,831
    RFQ
    SIS5712DN-T1-GE3

    Datenblatt

    TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 5.6A (Ta), 18A (Tc) 7.5V, 10V 55.5mOhm @ 5.6A, 10V 4V @ 250µA 11.3 nC @ 10 V ±20V 500 pF @ 75 V - 3.7W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    ISK018NE1LM7ATSA1

    ISK018NE1LM7ATSA1

    ISK018NE1LM7AULA1 MOSFET

    Infineon Technologies

    9,028
    RFQ
    ISK018NE1LM7ATSA1

    Datenblatt

    OptiMOS™ 7 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 30A (Ta), 129A (Tc) 4.5V, 7V 1.8mOhm @ 20A, 7V 2V @ 106µA 13.6 nC @ 7 V ±7V 1600 pF @ 7.5 V - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
    ISK057N04LM6ATSA1

    ISK057N04LM6ATSA1

    MOSFET N-CH 40V 64A 6VSON

    Infineon Technologies

    6,645
    RFQ
    ISK057N04LM6ATSA1

    Datenblatt

    OptiMOS™ 6 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 64A (Tc) 4.5V, 10V 5.75mOhm @ 20A, 10V 2.3V @ 250µA 12 nC @ 10 V ±20V 870 pF @ 20 V - 2.1W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
    BSB044N08NN3GXUMA2

    BSB044N08NN3GXUMA2

    MOSFET N-CH 80V 18A/90A 2WDSON

    Infineon Technologies

    4,142
    RFQ
    BSB044N08NN3GXUMA2

    Datenblatt

    OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Ta), 90A (Tc) 10V 4.4mOhm @ 30A, 10V 3.5V @ 97µA 73 nC @ 10 V ±20V 5700 pF @ 40 V - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    BSF450NE7NH3XUMA2

    BSF450NE7NH3XUMA2

    MOSFET N-CH 75V 5A/15A 2WDSON

    Infineon Technologies

    6,776
    RFQ
    BSF450NE7NH3XUMA2

    Datenblatt

    OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 5A (Ta), 15A (Tc) 7V, 10V 45mOhm @ 8A, 10V 3.8V @ 8µA 6 nC @ 10 V ±20V 390 pF @ 37.5 V - 2.2W (Ta), 18W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    BSF134N10NJ3GXUMA2

    BSF134N10NJ3GXUMA2

    MOSFET N-CH 100V 9A/40A 2WDSON

    Infineon Technologies

    3,453
    RFQ
    BSF134N10NJ3GXUMA2

    Datenblatt

    OptiMOS™ DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    APT80GA90B2D40

    APT80GA90B2D40

    MOSFET N-CH 800V 34A T-MAX

    Microchip Technology

    2,937
    RFQ
    APT80GA90B2D40

    Datenblatt

    - - Tube Active - - - - - - - - - - - - - - - - -
    SIR5812DP-T1-RE3

    SIR5812DP-T1-RE3

    MOSFET N-CH 80V 30A PPAK SO-8

    Vishay Siliconix

    2,326
    RFQ
    SIR5812DP-T1-RE3

    Datenblatt

    TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 45.3A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 775 pF @ 40 V - 4.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    MSC035SMA070SCT/R

    MSC035SMA070SCT/R

    MOSFET SIC 700 V 35 MOHM PSMT

    Microchip Technology

    8,820
    RFQ
    MSC035SMA070SCT/R

    Datenblatt

    mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 71A (Tc) 18V, 20V 44mOhm @ 30A, 20V 5V @ 2mA 93 nC @ 20 V +23V, -10V 1806 pF @ 700 V - 276W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    MSC020SMB120D/S

    MSC020SMB120D/S

    MOSFET SIC 1200 V 20 MOHM DIE

    Microchip Technology

    3,121
    RFQ
    MSC020SMB120D/S

    Datenblatt

    - - Tube Active - - - - - - - - - - - - - - - - -
    Kontaktieren Sie uns Mehr Produktinformationen erhalten!
    BomKey Elektronik

    Startseite

    BomKey Elektronik

    Produkte

    BomKey Elektronik

    Telefon

    BomKey Elektronik

    Benutzer

    Günstige Preise jeden Tag, sorgenfreie Auswahl.
    Günstige Preise jeden Tag, sorgenfreie Auswahl.
    Echte lizenzierte Waren, exzellenter Service.
    Echte lizenzierte Waren, exzellenter Service.
    Direktlieferung aus mehreren Lagern, schnelle Lieferung.
    Direktlieferung aus mehreren Lagern, schnelle Lieferung.
    Vollständige Produktpalette für einfaches Einkaufen.
    Vollständige Produktpalette für einfaches Einkaufen.
    Copyright © 2025 Bomkey Elektronik. Alle Rechte vorbehalten