Bomkey (HK) Elektronik GmbH!

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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    DBL152GH

    DBL152GH

    BRIDGE RECT 1PHASE 100V 1.5A DBL

    Taiwan Semiconductor Corporation

    3,091
    RFQ
    DBL152GH

    Datenblatt

    - 4-DIP (0.300", 7.62mm) Tube Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 100 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole DBL
    KBU402G

    KBU402G

    BRIDGE RECT 1PHASE 100V 4A KBU

    Taiwan Semiconductor Corporation

    8,548
    RFQ
    KBU402G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    TS20P01GH

    TS20P01GH

    BRIDGE RECT 1PHASE 50V 20A TS-6P

    Taiwan Semiconductor Corporation

    7,466
    RFQ
    TS20P01GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    TS20P03G

    TS20P03G

    BRIDGE RECT 1P 200V 20A TS-6P

    Taiwan Semiconductor Corporation

    9,688
    RFQ
    TS20P03G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 200 V 20 A 1.1 V @ 20 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBU803

    GBU803

    BRIDGE RECT 1PHASE 200V 8A GBU

    Taiwan Semiconductor Corporation

    8,042
    RFQ
    GBU803

    Datenblatt

    - 4-ESIP, GBU Tube Active Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU801

    GBU801

    BRIDGE RECT 1PHASE 50V 8A GBU

    Taiwan Semiconductor Corporation

    9,144
    RFQ
    GBU801

    Datenblatt

    - 4-ESIP, GBU Tube Active Single Phase Standard 50 V 8 A 1.1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    DBL103G

    DBL103G

    BRIDGE RECT 1PHASE 200V 1A DBL

    Taiwan Semiconductor Corporation

    3,598
    RFQ
    DBL103G

    Datenblatt

    - 4-DIP (0.300", 7.62mm) Tube Active Single Phase Standard 200 V 1 A 1.1 V @ 1 A 2 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole DBL
    TS25P01GH

    TS25P01GH

    BRIDGE RECT 1PHASE 35V 25A TS-6P

    Taiwan Semiconductor Corporation

    4,556
    RFQ
    TS25P01GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 35 V 25 A 1.1 V @ 25 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    GBU402

    GBU402

    BRIDGE RECT 1PHASE 100V 4A GBU

    Taiwan Semiconductor Corporation

    9,986
    RFQ
    GBU402

    Datenblatt

    - 4-ESIP, GBU Tube Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU401

    GBU401

    BRIDGE RECT 1PHASE 50V 4A GBU

    Taiwan Semiconductor Corporation

    2,263
    RFQ
    GBU401

    Datenblatt

    - 4-ESIP, GBU Tube Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    DBL103GH

    DBL103GH

    BRIDGE RECT 1PHASE 200V 1A DBL

    Taiwan Semiconductor Corporation

    3,357
    RFQ
    DBL103GH

    Datenblatt

    - 4-DIP (0.300", 7.62mm) Tube Active Single Phase Standard 200 V 1 A 1.1 V @ 1 A 2 µA @ 200 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole DBL
    TS25P01G

    TS25P01G

    BRIDGE RECT 1PHASE 50V 25A TS-6P

    Taiwan Semiconductor Corporation

    7,996
    RFQ
    TS25P01G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 50 V 25 A 1.1 V @ 25 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBU602G

    KBU602G

    BRIDGE RECT 1PHASE 100V 6A KBU

    Taiwan Semiconductor Corporation

    3,909
    RFQ
    KBU602G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 100 V 6 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    KBU601G

    KBU601G

    BRIDGE RECT 1PHASE 50V 6A KBU

    Taiwan Semiconductor Corporation

    9,557
    RFQ
    KBU601G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 50 V 6 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    DBL201G

    DBL201G

    BRIDGE RECT 1PHASE 50V 2A DBL

    Taiwan Semiconductor Corporation

    2,061
    RFQ
    DBL201G

    Datenblatt

    - 4-DIP (0.300", 7.62mm) Tube Active Single Phase Standard 50 V 2 A 1.15 V @ 2 A 2 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole DBL
    TS25P03GH

    TS25P03GH

    BRIDGE RECT 1P 200V 25A TS-6P

    Taiwan Semiconductor Corporation

    3,632
    RFQ
    TS25P03GH

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 200 V 25 A 1.1 V @ 25 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    KBL602G

    KBL602G

    BRIDGE RECT 1PHASE 100V 6A KBL

    Taiwan Semiconductor Corporation

    9,980
    RFQ
    KBL602G

    Datenblatt

    - 4-SIP, KBL Tray Active Single Phase Standard 100 V 6 A 1.1 V @ 6 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole KBL
    DBL202GH

    DBL202GH

    BRIDGE RECT 1PHASE 100V 2A DBL

    Taiwan Semiconductor Corporation

    5,002
    RFQ
    DBL202GH

    Datenblatt

    - 4-DIP (0.300", 7.62mm) Tube Active Single Phase Standard 100 V 2 A 1.15 V @ 2 A 2 µA @ 100 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole DBL
    KBL401G

    KBL401G

    BRIDGE RECT 1PHASE 50V 4A KBL

    Taiwan Semiconductor Corporation

    9,071
    RFQ
    KBL401G

    Datenblatt

    - 4-SIP, KBL Tray Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole KBL
    KBU803G

    KBU803G

    BRIDGE RECT 1PHASE 200V 8A KBU

    Taiwan Semiconductor Corporation

    4,350
    RFQ
    KBU803G

    Datenblatt

    - 4-SIP, KBU Tray Active Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole KBU
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