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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BU1006A-E3/45

    BU1006A-E3/45

    BRIDGE RECT 1PHASE 600V 3A BU

    Vishay General Semiconductor - Diodes Division

    5,339
    RFQ
    BU1006A-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1006A-E3/51

    BU1006A-E3/51

    BRIDGE RECT 1PHASE 600V 3A BU

    Vishay General Semiconductor - Diodes Division

    4,373
    RFQ
    BU1006A-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1006-E3/51

    BU1006-E3/51

    BRIDGE RECT 1PHASE 600V 3.2A BU

    Vishay General Semiconductor - Diodes Division

    3,847
    RFQ
    BU1006-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1008A-E3/45

    BU1008A-E3/45

    BRIDGE RECT 1PHASE 800V 3A BU

    Vishay General Semiconductor - Diodes Division

    4,118
    RFQ
    BU1008A-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1008A-E3/51

    BU1008A-E3/51

    BRIDGE RECT 1PHASE 800V 3A BU

    Vishay General Semiconductor - Diodes Division

    7,047
    RFQ
    BU1008A-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1008-E3/45

    BU1008-E3/45

    BRIDGE RECT 1PHASE 800V 3.2A BU

    Vishay General Semiconductor - Diodes Division

    4,881
    RFQ
    BU1008-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1010A-E3/45

    BU1010A-E3/45

    BRIDGE RECT 1PHASE 1KV 3A BU

    Vishay General Semiconductor - Diodes Division

    9,265
    RFQ
    BU1010A-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1010-E3/45

    BU1010-E3/45

    BRIDGE RECT 1PHASE 1KV 3.2A BU

    Vishay General Semiconductor - Diodes Division

    5,684
    RFQ
    BU1010-E3/45

    Datenblatt

    - 4-SIP, BU Tube Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1010-E3/51

    BU1010-E3/51

    BRIDGE RECT 1PHASE 1KV 3.2A BU

    Vishay General Semiconductor - Diodes Division

    6,626
    RFQ
    BU1010-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1206-E3/51

    BU1206-E3/51

    BRIDGE RECT 1PHASE 600V 3.4A BU

    Vishay General Semiconductor - Diodes Division

    6,077
    RFQ
    BU1206-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1208-E3/51

    BU1208-E3/51

    BRIDGE RECT 1PHASE 800V 3.4A BU

    Vishay General Semiconductor - Diodes Division

    8,506
    RFQ
    BU1208-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1210-E3/51

    BU1210-E3/51

    BRIDGE RECT 1PHASE 1KV 3.4A BU

    Vishay General Semiconductor - Diodes Division

    6,301
    RFQ
    BU1210-E3/51

    Datenblatt

    - 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1006A-M3/51

    BU1006A-M3/51

    BRIDGE RECT 1PHASE 600V 10A BU

    Vishay General Semiconductor - Diodes Division

    3,989
    RFQ
    BU1006A-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1006-M3/51

    BU1006-M3/51

    BRIDGE RECT 1PHASE 600V 10A BU

    Vishay General Semiconductor - Diodes Division

    7,043
    RFQ
    BU1006-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1008A-M3/51

    BU1008A-M3/51

    BRIDGE RECT 1PHASE 800V 10A BU

    Vishay General Semiconductor - Diodes Division

    5,246
    RFQ
    BU1008A-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1008-M3/51

    BU1008-M3/51

    BRIDGE RECT 1PHASE 800V 10A BU

    Vishay General Semiconductor - Diodes Division

    3,102
    RFQ
    BU1008-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1010A-M3/51

    BU1010A-M3/51

    BRIDGE RECT 1PHASE 1KV 10A BU

    Vishay General Semiconductor - Diodes Division

    5,773
    RFQ
    BU1010A-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1010-M3/51

    BU1010-M3/51

    BRIDGE RECT 1PHASE 1KV 10A BU

    Vishay General Semiconductor - Diodes Division

    9,561
    RFQ
    BU1010-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1206-M3/51

    BU1206-M3/51

    BRIDGE RECT 1PHASE 600V 12A BU

    Vishay General Semiconductor - Diodes Division

    4,487
    RFQ
    BU1206-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU1208-M3/51

    BU1208-M3/51

    BRIDGE RECT 1PHASE 800V 12A BU

    Vishay General Semiconductor - Diodes Division

    7,750
    RFQ
    BU1208-M3/51

    Datenblatt

    - 4-SIP, BU Tray Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
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