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    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodentyp Technologie Spannung - Spitzensperrspannung (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Strom - Sperrleck @ Vr Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    GBU8D-E3/51

    GBU8D-E3/51

    BRIDGE RECT 1PHASE 200V 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    7,929
    RFQ
    GBU8D-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 200 V 3.9 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU8G-E3/51

    GBU8G-E3/51

    BRIDGE RECT 1PHASE 400V 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    8,947
    RFQ
    GBU8G-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 400 V 3.9 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU8B-E3/45

    GBU8B-E3/45

    BRIDGE RECT 1PHASE 100V 3.9A GBU

    Vishay General Semiconductor - Diodes Division

    2,950
    RFQ
    GBU8B-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 100 V 3.9 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    TS25P04G

    TS25P04G

    BRIDGE RECT 1P 400V 25A TS-6P

    Taiwan Semiconductor Corporation

    9,907
    RFQ
    TS25P04G

    Datenblatt

    - 4-SIP, TS-6P Tube Active Single Phase Standard 400 V 25 A 1.1 V @ 25 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    GBP210

    GBP210

    BRIDGE RECT 1PHASE 1KV 2A GBP

    Diodes Incorporated

    1,277
    RFQ
    GBP210

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 1 kV 2 A 1.05 V @ 1 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBP
    GBP206

    GBP206

    BRIDGE RECT 1PHASE 600V 2A GBP

    Diodes Incorporated

    3,434
    RFQ
    GBP206

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 600 V 2 A 1.05 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBP
    GBP208

    GBP208

    BRIDGE RECT 1PHASE 800V 2A GBP

    Diodes Incorporated

    1,939
    RFQ
    GBP208

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 800 V 2 A 1.05 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBP
    GBU6D-E3/51

    GBU6D-E3/51

    BRIDGE RECT 1PHASE 200V 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    6,687
    RFQ
    GBU6D-E3/51

    Datenblatt

    - 4-SIP, GBU Bulk Active Single Phase Standard 200 V 3.8 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    DF1510S-E3/45

    DF1510S-E3/45

    BRIDGE RECT 1PHASE 1KV 1.5A DFS

    Vishay General Semiconductor - Diodes Division

    9,713
    RFQ
    DF1510S-E3/45

    Datenblatt

    - 4-SMD, Gull Wing Tube Active Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount DFS
    DFL1506S-E3/45

    DFL1506S-E3/45

    BRIDGE RECT 1PHASE 600V 1.5A DFS

    Vishay General Semiconductor - Diodes Division

    2,507
    RFQ
    DFL1506S-E3/45

    Datenblatt

    - 4-SMD, Gull Wing Tube Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Surface Mount DFS
    BR1004SG-G

    BR1004SG-G

    BRIDGE RECT 1PHASE 400V 10A BR-8

    Comchip Technology

    5,396
    RFQ
    BR1004SG-G

    Datenblatt

    - 4-Square, BR-8 Bulk Active Single Phase Standard 400 V 10 A 1.1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Chassis Mount BR-8
    GBU6M-E3/45

    GBU6M-E3/45

    BRIDGE RECT 1PHASE 1KV 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    9,461
    RFQ
    GBU6M-E3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 1 kV 3.8 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU8M-M3/45

    GBU8M-M3/45

    BRIDGE RECT 1PHASE 1KV 8A GBU

    Vishay General Semiconductor - Diodes Division

    5,115
    RFQ
    GBU8M-M3/45

    Datenblatt

    - 4-SIP, GBU Tube Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBP306

    GBP306

    BRIDGE RECT 1PHASE 600V 3A GBP

    Diodes Incorporated

    4,542
    RFQ
    GBP306

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 600 V 3 A 1.05 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBP
    GBP308

    GBP308

    BRIDGE RECT 1PHASE 800V 3A GBP

    Diodes Incorporated

    3,192
    RFQ
    GBP308

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 800 V 3 A 1.05 V @ 1.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBP
    B2S-E3/80

    B2S-E3/80

    BRIDGE RECT 1P 200V 0.5A TO269AA

    Vishay General Semiconductor - Diodes Division

    6,616
    RFQ
    B2S-E3/80

    Datenblatt

    - TO-269AA, 4-BESOP Tape & Reel (TR) Active Single Phase Standard 200 V 500 mA 1 V @ 500 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Surface Mount TO-269AA (MBS)
    GBU606G

    GBU606G

    BRIDGE RECT 1PHASE 600V 6A GBU

    SMC Diode Solutions

    4,457
    RFQ
    GBU606G

    Datenblatt

    - 4-ESIP Tube Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    ABS6 REG

    ABS6 REG

    BRIDGE RECT 1PHASE 600V 1A ABS

    Taiwan Semiconductor Corporation

    5,506
    RFQ
    ABS6 REG

    Datenblatt

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 600 V 1 A 950 mV @ 400 mA 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Surface Mount ABS
    TBS410

    TBS410

    BRIDGE RECT 1PHASE 1KV 4A TBS

    Taiwan Semiconductor Corporation

    5,681
    RFQ
    TBS410

    Datenblatt

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 2 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount TBS
    GBP406

    GBP406

    BRIDGE RECT 1PHASE 600V 4A GBP

    Diodes Incorporated

    9,890
    RFQ
    GBP406

    Datenblatt

    - 4-SIP, GBP Tube Active Single Phase Standard 600 V 4 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBP
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