Bomkey (HK) Elektronik GmbH - Einzelne, vorgespannte Bipolartransistoren - Bipolar (BJT) - Seite 41 - Originalquelle der Waren - BomKey Elektronik – Spezialist für die Herstellung und Service von elektronischen Komponenten

Hersteller-Teilenr.	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	Transistortyp	Strom - Kollektor (Ic) (Max)	Spannung - Kollektor-Emitter-Durchbruch (Max)	Widerstand - Basis (R1)	Widerstand - Emitter-Basis (R2)	DC-Stromverstärkung (hFE) (Min) @ Ic, Vce	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektor-Abschaltung (Max)	Frequenz - Übergang	Leistung – Max	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket
RN1417,LF TRANS PREBIAS NPN 50V 0.1A SMINI Toshiba Semiconductor and Storage	4,070	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	10 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	-	-	Surface Mount	S-Mini
RN1308,LF TRANS PREBIAS NPN 50V 0.1A SC70 Toshiba Semiconductor and Storage	3,580	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	-	-	Surface Mount	SC-70
DTC015EUBTL TRANS PREBIAS NPN 50V UMT3F Rohm Semiconductor	3,000	-	RFQ	Datenblatt	DTC015E	SC-85	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	100 kOhms	100 kOhms	80 @ 5mA, 10V	100mV @ 500µA, 5mA	500nA	250 MHz	200 mW	-	-	Surface Mount	UMT3F
RN2411,LF TRANS PREBIAS PNP 50V 0.1A SMINI Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	200 mW	-	-	Surface Mount	S-Mini
RN2418,LF TRANS PREBIAS PNP 50V 0.1A SMINI Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	47 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	-	-	Surface Mount	S-Mini
TDTA124E,LM TRANS PREBIAS PNP 50V SOT23-3 Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	22 kOhms	-	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
TDTA143Z,LM TRANS PREBIAS PNP 50V SOT23-3 Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
RN1313,LF TRANS PREBIAS NPN 50V 0.1A USM Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250 MHz	100 mW	Automotive	AEC-Q101	Surface Mount	USM
TDTC144E,LM TRANS PREBIAS NPN 50V SOT23-3 Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	-	77 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
RN2313,LF TRANS PREBIAS PNP 50V 0.1A SC70 Toshiba Semiconductor and Storage	3,000	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	-	-	Surface Mount	SC-70
MMBTRC119SS BIASED BJT SOT23 NPN 4.7KOHM Diotec Semiconductor	3,000	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	10 kOhms	30 @ 10mA, 5V	-	500nA	250 MHz	200 mW	-	-	Surface Mount	SOT-23-3 (TO-236)
TDTA144E,LM TRANS PREBIAS PNP 50V SOT23-3 Toshiba Semiconductor and Storage	2,990	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	47 kOhms	-	88 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
TDTA143E,LM TRANS PREBIAS PNP 50V SOT23-3 Toshiba Semiconductor and Storage	2,990	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	-	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
RN2416,LF TRANS PREBIAS PNP 50V 0.1A SMINI Toshiba Semiconductor and Storage	2,980	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	-	-	Surface Mount	S-Mini
TDTC114Y,LM TRANS PREBIAS NPN 50V SOT23-3 Toshiba Semiconductor and Storage	2,978	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	10 kOhms	-	79 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
TDTA123J,LM TRANS PREBIAS PNP 50V SOT23-3 Toshiba Semiconductor and Storage	2,970	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	2.2 kOhms	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
TDTC123J,LM TRANS PREBIAS NPN 50V SOT23-3 Toshiba Semiconductor and Storage	2,946	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	2.2 kOhms	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	-	-	Surface Mount	SOT-23-3
MMBTRC105SS BIASED BJT SOT23 NPN 2.2KOHM Diotec Semiconductor	2,940	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	NPN - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	-	500nA	200 MHz	200 mW	-	-	Surface Mount	SOT-23-3 (TO-236)
RN2310,LF TRANS PREBIAS PNP 50V 0.1A SC70 Toshiba Semiconductor and Storage	2,900	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	-	-	Surface Mount	SC-70
PDTA124TT,215 TRANS PREBIAS PNP 50V TO236AB Nexperia USA Inc.	2,890	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	PNP - Pre-Biased	100 mA	50 V	22 kOhms	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	250 mW	-	-	Surface Mount	TO-236AB

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